Method and slurry composition for chemical-mechanical polish (CM

Details Method and slurry composition for chemical-mechanical polish (CM Method and slurry composition for chemical-mechanical polish (CM

1998-05-18

1999-01-26

Jones, Deborah

Abrasive tool making process, material, or composition

With inorganic material

51308, 51309, 252 791, 438693, B24D 334

Patent

active

058633073

ABSTRACT:
A Chemical-Mechanical Polish (CMP) planarizing method and a Chemical-Mechanical Polish (CMP) slurry composition for Chemical-Mechanical Polish (CMP) planarizing of copper metal and copper metal alloy layers within integrated circuits. There is first provided a semiconductor substrate having formed upon its surface a patterned substrate layer. Formed within and upon the patterned substrate layer is a blanket copper metal layer or a blanket copper metal alloy layer. The blanket copper metal layer or blanket copper metal alloy layer is then planarized through a Chemical-Mechanical Polish (CMP) planarizing method employing a Chemical-Mechanical Polish (CMP) slurry composition. The Chemical-Mechanical Polish (CMP) slurry composition comprises a non-aqueous coordinating solvent and a halogen radical producing specie.

REFERENCES:
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patent: 5378309 (1995-01-01), Rabinzohn
patent: 5780358 (1998-07-01), Zhou et al.
Hui-Qing et al. "Copper Metal Oxidation by a Dimethyl sulforide-carbon Tetrachloride Mixture", Proceedings, Science Research Congress 1992. Singapore, pp. 81-86..

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