Method and resulting structure for PCMO film to obtain...

Details Method and resulting structure for PCMO film to obtain... Method and resulting structure for PCMO film to obtain...

2007-03-06

2007-03-06

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S734000

Reexamination Certificate

active

10854755

ABSTRACT:
A high selectivity and etch rate with innovative approach of inductively coupled plasma source. Preferably, the invention includes a method using plasma chemistry that is divided into main etch step of (e.g., Cl2+HBr+C4F8) gas combination and over etch step of (e.g., HBr+Ar). The main etch step provides a faster etch rate and selectivity while the over etch step will decrease the etch rate and ensure the stringer and residue removal without attacking the under layer.

REFERENCES:
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patent: 2005/0079727 (2005-04-01), Zhang et al.
patent: 2005/0230724 (2005-10-01), Hsu
Beck et al., “Reproducible switching effect in thin oxide films for memory applications”, Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
Lee et al., “Dry etching to form submicron features in CMR oxides”, Mat. Res. Soc. Symp. Proc. vol. 574, pp. 341-346, no date avail.
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.
Zhuang et al., Novell colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM), IEEE, 2002.

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