Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-02-01
2011-02-01
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
Reexamination Certificate
active
07880263
ABSTRACT:
A shallow trench isolation structure for integrated circuits. The structure includes a semiconductor substrate and a buffered oxide layer overlying the semiconductor substrate. A pad nitride layer is overlying the buffered oxide layer. An implanted region is formed around a perimeter of the trench region. A trench region is formed within the semiconductor substrate. The trench region has a bottom width of less than 0.13 microns and an upper width of less than 0.13 microns. A rounded edge region is within a portion of the semiconductor substrate surrounding a periphery of the trench region. The rounded edges have a radius of curvature greater than about 0.02 um. A planarized high density plasma fill material is formed within the trench region. The structure has a P-well region within the semiconductor substrate and bordering a vicinity of the trench region. A channel region is within the P-well region within the semiconductor substrate. The implanted region has a concentration of more than double an amount of impurities as impurities in the channel region.
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Nguyen Dao H
Nguyen Tram H
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
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