Image analysis – Applications – Manufacturing or product inspection
Reexamination Certificate
2011-07-05
2011-07-05
Le, Brian Q (Department: 2624)
Image analysis
Applications
Manufacturing or product inspection
C382S145000, C382S181000
Reexamination Certificate
active
07974457
ABSTRACT:
A method of testing a mask pattern, includes applying optical proximity-effect compensation to a first pattern to be tested and to be formed onto a mask layer, to thereby form a mask pattern of the mask layer, dividing the first pattern into a plurality of areas in accordance with a second pattern to be formed onto another mask layer, determining sampling points on an edge of the first pattern, determining a test standard for each of the areas, simulating a resist pattern formed on a resist by exposing the resist to a light through the mask pattern, and checking whether a dimensional gap between the first pattern and the resist pattern at each of the sampling points is within a test standard associated with an area to which each of the sampling points belongs, wherein test standards for first and second areas among the areas are different from each other.
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Japanese Official Action and Translation (6 pgs) Date: (Jan. 2003).
Hayes & Soloway P.C.
Le Brian Q
Park Edward
Renesas Electronics Corporation
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