Method and production of a sensor

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S106000

Reexamination Certificate

active

06964927

ABSTRACT:
The invention relates to a method for producing a sensor (1), wherein a carrier chip (2) is produced. Said chip is provided with a sensor structure (3) comprising an active sensor surface (4). A material (9) capable of flowing is applied onto carrier chips (2) in such a way that the sensor structure (3) has a thinner layer thickness on said active sensor surface (4) than on the area of the carrier chip (2) which borders on the active sensor surface (4). The material (9) which is capable of flowing is hardened thereafter. The hardened material (9) is subsequently removed by chemical means from the surface which faces said carrier chip (2) until the active sensor surface of the sensor structure is layed bare.

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