Method and monitor testsite pattern for measuring critical dimen

Details Method and monitor testsite pattern for measuring critical dimen Method and monitor testsite pattern for measuring critical dimen

1995-11-22

1997-06-10

Powell, William

Semiconductor device manufacturing: process

With measuring or testing

216 56, 216 59, 216 84, 438671, 438703, H01L 2100

Patent

active

056371861

ABSTRACT:
A process and a monitor structure to measure semiconductor device dimensions, especially contact and via hole dimensions, and proximity effects. The monitor has structures and layers which match the thickness and configuration of the product devices and allow measurement of step heights and proximity measurements. The monitor pattern includes an alignment region for use with automeasurement equipment. Measurements of openings are performed on the monitor at various points during the fabrication process.

Affiliated with

Also associated with

Rating

Method and monitor testsite pattern for measuring critical dimen does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and monitor testsite pattern for measuring critical dimen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and monitor testsite pattern for measuring critical dimen will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-762250