Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-12-05
1998-08-18
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117200, 117217, 117222, C30B 1520
Patent
active
057953830
ABSTRACT:
A method and a mechanism for lifting a gas flow-guide cylinder of a crystal pulling apparatus are disclosed. The crystal pulling apparatus includes a crucible for accommodating a crystalline material and for melting the crystalline material through heating, and a gas flow-guide cylinder capable of being moved upward/downward above the crucible. The crystal pulling apparatus is operated to grow a single crystal from the crystalline material by a pulling method. When a solid crystalline material is to be placed in the crucible, the gas flow-guide cylinder is moved upward to thereby separate the bottom end of the gas flow-guide cylinder away from the top portion of the crucible. This prevents the crystalline material from coming into contact with the gas flow-guide cylinder.
REFERENCES:
patent: 3511610 (1970-05-01), Dohmen
patent: 5004514 (1991-04-01), Hariri
Iwasaki Atsushi
Oda Tetsuhiro
Okamoto Hideo
Uesugi Toshiharu
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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