Method and measuring instrument for identifying the diffusion le

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158D, G01R 3126

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048412392

ABSTRACT:
Method and measuring instrument for identifying the diffusion length of minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies. The method provides that the semiconductor crystal body is positioned between two electrolyte-filled measuring chamber halves and that the minority charge carriers of the photocurrent that results at a front side of the semiconductor crystal body due to irradiation is detected by an applied constant voltage between a backside of the semiconductor crystal body and a rear electrolyte at the backside of the semiconductor crystal body. Taking the thickness (D) of the semiconductor crystal body into consideration, the diffusion length (L) can be calculated from a mathematical equation using the quotient of the minority charge carrier current I.sub.G I/.sub.O occurring at the backside and at the front side of the semiconductor crystal body. The method provides topically resolved measurements for irradiation of the semiconductor crystal body. A measuring instrument for the implementation of the method is disclosed. The method can be used for determining the quality of semiconductor crystals.

REFERENCES:
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patent: 4205265 (1980-05-01), Staebler
patent: 4544887 (1985-10-01), Kamieniecki
patent: 4598249 (1986-07-01), Goodman et al.
Kurtz et al; "Rapid Characterization . . . "; Conference Record, 19th IEEE Photovoltaic Specialists Conf., New Orleans, LA; May 4-8, 1987; Pub. Oct. 1987, pp. 823-826.
Library of Congress Cataloging Publication Data of "Texas Instruments Electronics Series", edited by Tyler G. Hicks and Lester Strong, 1975, pp. 104 through 129.

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