Method and means for passivation and isolation in semiconductor

Details Method and means for passivation and isolation in semiconductor Method and means for passivation and isolation in semiconductor

1974-12-20

1977-04-12

Wojciechowicz, Edward J.

357 50, 357 61, 357 91, 357 63, H01L 2934, H01L 2704, H01L 29161, H01L 29167

Patent

active

040178870

ABSTRACT:
The use of ion implantation to produce low concentrations of chromium, oxygen or iron in a gallium arsenide junction type semiconductor, utilizing the accompanying low resistivity to provide an improved device.

REFERENCES:
patent: 3390019 (1968-06-01), Manchester
patent: 3515956 (1970-06-01), Martin et al.
patent: 3586542 (1971-06-01), MacRae
patent: 3622382 (1971-11-01), Brack
patent: 3653978 (1972-04-01), Robinson
patent: 3666548 (1972-05-01), Brack

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