Method and means for measuring operating temperature of semicond

Details Method and means for measuring operating temperature of semicond Method and means for measuring operating temperature of semicond

1989-04-19

1991-06-25

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 715, 324158D, G01R 3126

Patent

active

050270648

ABSTRACT:
The operating temperature of the active region of an RF semiconductor device such as a microwave hybrid circuit having a gallium arsenide field-effect transistor therein is determined by measuring signal gain of the device at variable times following application of bias voltage to the device. Bias voltage is applied in response to a constant duty cycle pulse train from which are derived a sample-and-hold command pulse and a synchronized bias control pulse.

REFERENCES:
patent: 3659199 (1972-04-01), Knutson
patent: 3870953 (1975-03-01), Boatman
patent: 3895297 (1975-07-01), Jarl
patent: 3904962 (1975-09-01), Olson, Jr.
patent: 4114096 (1978-09-01), Chinery
patent: 4588945 (1986-05-01), Groves et al.

Affiliated with

Also associated with

Rating

Method and means for measuring operating temperature of semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and means for measuring operating temperature of semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and means for measuring operating temperature of semicond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1042730