Measuring and testing – Moisture content or absorption characteristic of material
Patent
1979-04-16
1981-06-16
Goldberg, Gerald
Measuring and testing
Moisture content or absorption characteristic of material
324 65R, 338 35, 357 75, G01N 2718
Patent
active
042729866
ABSTRACT:
The moisture content of a hermetically sealed semiconductor device is a function of the dew point of the cavity atmosphere which is the temperature of maximum surface conductivity. A pattern of interdigitated thin film aluminum conductors is provided on an impurity free, non-porous silicon oxide insulative substrate. The surface conductivity of this structure rises as moisture condenses onto and between the conductors as the temperature is reduced at a slow controlled rate to the dew point temperature. The amplitude of the maximum surface conductivity is proportional to ionic impurity concentration.
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patent: 4057823 (1977-11-01), Burkhardt et al.
patent: 4143177 (1979-03-01), Kovac et al.
Merrett, R. P. et al., Moisture Measurement Technology for Hermetic Semiconductor Devices, In ARPA/NBS Workshop, Mar. 22-23, 1978, pp. 27-28.
Meyer, D. E., Miniature Moisture Sensors for In-Package Use by the Microelectronics Industry, pp. 48-52.
Lowry Robert K.
Miller Larry A.
Goldberg Gerald
Harris Corporation
Roskos Joseph W.
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