Method and material for processing iron disilicide for...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S089000, C438S682000, C438S683000, C257SE21006, C257SE21199, C257SE21200

Reexamination Certificate

active

08058092

ABSTRACT:
A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.

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