Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2008-07-01
2008-07-01
Young, Christopher G. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C257S048000, C257S797000, C382S172000, C382S172000
Reexamination Certificate
active
10840922
ABSTRACT:
There is a structure and method for measuring the lengths of lines and spaces in semiconductor process. In an example embodiment, a lithographic structure (400) comprises, a frame (450). The frame includes a top inside edge, a top outside edge, a bottom inside edge, a bottom outside edge, a left inside edge, a left outside edge, a right inside edge, and a right outside edge. There is a first array of lines (430) and spaces, the first array having end of lines (420b) and end of spaces (430a). The lines have a first line width and the spaces have a first space width; the end of spaces are at a first distance (10) from the top outside edge of the frame (450), the end of lines are at a second distance (20) from the top outside edge of the frame (450). A first opening (410a) is a third distance (30) from the bottom outside edge of the frame and a second opening (410b) is a fourth distance (40) from the bottom outside edge of the frame.
REFERENCES:
patent: 6778275 (2004-08-01), Bowes
patent: 2003/0156276 (2003-08-01), Bowes
Young Christopher G.
Zawilski Peter
LandOfFree
Method and lithographic structure for measuring lengths of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and lithographic structure for measuring lengths of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and lithographic structure for measuring lengths of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3942557