Method and its apparatus for measuring size and shape of...

Details Method and its apparatus for measuring size and shape of... Method and its apparatus for measuring size and shape of...

2006-08-01

2006-08-01

Lee, Hwa (Andrew) (Department: 2877)

Optics: measuring and testing

Dimension

Width or diameter

Reexamination Certificate

active

07084990

ABSTRACT:
In size measurement of a semiconductor device, profiles of a pattern formed in a resist process are determined through an exposure/development simulation in respect of individual different combinations of exposure values and focus values to form a profile matrix and scattered light intensity distributions corresponding to the individual profiles are determined through calculation to form a scattered light library, thereby forming a profile library consisting of the profile matrix and scattered light library. A scattered light intensity distribution of an actually measured pattern is compared with the scattered light intensity distributions of the scattered light library and a profile of profile matrix corresponding to a scattered light intensity distribution of scattered light library having the highest coincidence is determined as a three-dimensional shape of the actually measured pattern.

REFERENCES:
patent: 6642063 (2003-11-01), Mundt et al.
patent: 6778268 (2004-08-01), Singh et al.
patent: 2003/0015660 (2003-01-01), Shishido et al.
patent: 2003/0048458 (2003-03-01), Mieher et al.
patent: 2003/0121022 (2003-06-01), Yoshitake et al.

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