Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2005-03-22
2005-03-22
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S005000, C438S014000, C438S016000, C700S121000
Reexamination Certificate
active
06869807
ABSTRACT:
Deviations from optimum values of the exposure light quantity and focus of test and product circuit patterns are predicted from the dimensions of the patterns, illumination conditions and the wave aberration of an exposure lens. A signal waveform of scatterometry of the test pattern is linked to the deviations from the optimum values of the exposure light quantity and focus to form a library. The test pattern after exposed and developed in actual steps is collated with the signal waveform in the library measured by the scatterometry to find deviations from the optimum values of the exposure light quantity and focus of the test pattern. Deviations of the optimum values of a product circuit pattern from the deviations of the test pattern are acquired on the basis of the deviations, and the acquired deviations are fed back to subsequent exposure steps.
REFERENCES:
patent: 6483580 (2002-11-01), Xu et al.
patent: 6617087 (2003-09-01), Rangarajan et al.
patent: 6643557 (2003-11-01), Miller et al.
patent: 20020072001 (2002-06-01), Brown et al.
patent: 20020177245 (2002-11-01), Sonderman et al.
patent: 20030058443 (2003-03-01), Xu et al.
John Sturtevant, et al., “Implementation of a Closed-loop CD and Overlay Controller for Sub-0.25μm Patterning,”SPIE, vol. 3332, pp. 461-470.
Xinhui Niu, “Specular Spectroscopic Scatterometry in DUV Lithography,”SPIE(Mar. 1999) 3677:159-68.
M.G. Moharam, et al., “Diffraction Analysis of Dielectric Surface-relief Gratings,”J. Opt. Soc. Am., (Oct. 1982) 72(10):1385-92.
Y. Yoshitake, et al., “Multispot Scanning Exposure System for Excimer Laser Stepper,”SPIE(Mar. 1991) 1463:678-87.
Nigel R. Farrar, et al., “In-situ Measurement of Lens Aberrations,”Optical Microlithography XIII, SPIE, vol. 4000, pp. 18-29.
Tamaki Kenji
Watanabe Masahiro
Yoshitake Yasuhiro
Hitachi , Ltd.
Malsawma Lex H.
Townsend and Townsend / and Crew LLP
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