Method and installation for etching a substrate

Details Method and installation for etching a substrate Method and installation for etching a substrate

2005-04-26

2005-04-26

Mills, Gregory (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With plasma generation means remote from processing chamber

C156S345380, C156S345110, C156S345330, C156S345230, C134S113000

Reexamination Certificate

active

06884317

ABSTRACT:
Method for etching a substrate wherein, after placing in an etching chamber, said substrate is treated with a mixture of HF and acetic acid. Acetic acid is introduced into the chamber first, followed by the hydrogen fluoride. Hydrogen fluoride is introduced via an intermediate stage during which the hydrogen fluoride is stored in an auxiliary chamber. By this means back-flow of a corrosive mixture consisting of hydrogen fluoride and acetic acid into the piping assembly for hydrogen fluoride is prevented and, thus, the life of the piping assembly concerned is appreciably prolonged and metal contamination on substrate treated later is prevented.

REFERENCES:
patent: 5022961 (1991-06-01), Izumi et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 6162323 (2000-12-01), Koshimizu
patent: 6333275 (2001-12-01), Mayer et al.
patent: 6432255 (2002-08-01), Sun et al.
patent: 0 335 313 (1989-10-01), None
patent: WO 8701508 (1987-03-01), None
patent: WO 9427315 (1994-11-01), None

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