Method and fabricating complementary metal-oxide...

Details Method and fabricating complementary metal-oxide... Method and fabricating complementary metal-oxide...

2006-02-28

2006-02-28

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S527000, C438S200000

Reexamination Certificate

active

07005315

ABSTRACT:
The present invention relates to a method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor. Prior to forming an N-type ion implantation region and a first and a second P0-type ion implantation regions, an oxide layer and a nitride layer are sequentially formed on a substrate and are subsequently patterned to form a protective pattern structure with a specific arrangement with respect to a photodiode and a gate structure of a transfer transistor. Afterwards, the gate structure is formed on the substrate. In the existence of the protective pattern structure, an N-type ion implantation process for forming the N-type ion implantation region for use in the photodiode, a first P0-type ion implantation process for forming the first P0-type ion implantation region and a spacer formation process are consecutively performed. A second P0-type ion implantation process for forming the second P0-type ion implantation region is performed thereafter.

REFERENCES:
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patent: 6635912 (2003-10-01), Ohkubo
patent: 6784015 (2004-08-01), Hatano et al.
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patent: 2003/0127666 (2003-07-01), Lee
patent: 2004/0129990 (2004-07-01), Lee

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