Method and equipment for specimen preparation

Details Method and equipment for specimen preparation Method and equipment for specimen preparation

2005-09-28

2008-11-18

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492220, C250S307000, C250S304000

Reexamination Certificate

active

07453073

ABSTRACT:
Method and equipment permitting one to easily prepare a good thin-film specimen adapted for observation are offered. The equipment has an ion gun tilted left and right repeatedly to etch a specimen material by an electron beam tilted left and right by 1.5° about the z-axis. Then, the ion gun is tilted left and right plural times to ion etch the specimen material. Since a portion of the specimen material is especially heavily etched, a through-hole is formed in the specimen material. A thin film having a thickness of about 100 Å is formed around the through-hole. This thickness is adapted for TEM (transmission electron microscope) observation.

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L.R. Herlinger et al., “TEM Sample Preparation Using a Focused Ion Beam and a Probe Manipulator,” Proceedings of the International Symposium for Testing and Failure Analysis, Nov. 18-22, 1996, pp. 199-205, Los Angeles, CA.

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