Method and equipment for manufacturing semiconductor device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

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438 47, 438503, 117107, 117109, H01L 21205

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059406844

ABSTRACT:
By (a) performing a first treatment process to a substrate in a first apparatus, (b) moving the substrate having undergone the first treatment process into an airtight passage communicating with the first apparatus and shut off from outside and thereafter, shutting off the communication between the passage and the first apparatus, (c) setting the passage to communicate with a second apparatus to move the substrate into the second apparatus, and (d) performing a second treatment process in the second apparatus, the treatment processes are performed in treatment apparatuses suitable therefor without the substrate being exposed to the outside air. As a result, the time between the treatment processes is reduced and the availability ratio of the expensive equipment is improved.

REFERENCES:
patent: 4636401 (1987-01-01), Yamazaki et al.
patent: 4960720 (1990-10-01), Shimbo
patent: 5478780 (1995-12-01), Koerner et al.
patent: 5670798 (1997-09-01), Schetzina
G. Lucovsky et al., Formation of Inorganic Films', in Thin Film Processes II, edited by J. Vossen and W. Kern, Academic Press, pp. 585-592 (no month given), 1991.

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