Method and device with durable contact on silicon carbide

Details Method and device with durable contact on silicon carbide Method and device with durable contact on silicon carbide

2008-04-21

2009-11-17

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

C438S570000, C438S572000, C438S581000, C438S582000, C438S931000, C257S077000, C257S471000, C257SE21359, C257SE21368, C257SE21470

Reexamination Certificate

active

07618884

ABSTRACT:
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact27is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

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