Method and device with durable contact on silicon carbide

Details Method and device with durable contact on silicon carbide Method and device with durable contact on silicon carbide

2005-03-18

2008-08-12

Nguyen, Dao H. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S073000, C257S471000, C257SE21047, C257SE21065

Reexamination Certificate

active

07411218

ABSTRACT:
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact27is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

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