Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals
Reexamination Certificate
2007-11-20
2007-11-20
Gupta, Yogendra M. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes joining independent crystals
C117S054000, C117S915000
Reexamination Certificate
active
10741692
ABSTRACT:
A method of forming an anisotropic crystal film, comprising providing a donor which comprises a base and an anisotropic crystal film bounded to the base, and a receptor. At least a portion of the anisotropic crystal film is placed in contact with the receptor. A loading is applied to at least a portion of the base, whereby providing shear and compressive stresses onto the donor and receptor, and transferring at least a portion of the anisotropic crystal film onto the receptor and delaminating the at least portion of the anisotropic crystal film from the base.
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Lazarev Pavel I.
Paukshto Michael V.
Gupta Yogendra M.
Song Matthew J.
Westerman Hattori Daniels & Adrian LLP
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