Method and device for the production of a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

Reexamination Certificate

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C117S200000

Reexamination Certificate

active

07011704

ABSTRACT:
A method for the production of a single crystal has the single crystal crystallizing from a melt and being subjected to a rotation with an alternating rotation direction. The single crystal is periodically rotated through a sequence of rotation angles, and the rotation direction is changed after each rotation through a rotation angle of the sequence, with a change of the rotation direction defining an inversion point on the circumference of the single crystal. There is at least one recurring pattern of inversion points created, in which the inversion points lie distributed on straight lines that are aligned parallel with the z-axis and are spaced apart uniformly from one another.

REFERENCES:
patent: 4851628 (1989-07-01), Ammon et al.
patent: 5725660 (1998-03-01), Hiraishi
patent: 3007 377 (1981-09-01), None
patent: 2002249393 (2002-09-01), None
Radial Oxygen Control Process in Silicon Crystals, IBM Technical Disclosure Bulletin, vol. 27(8), pp. 4817-4818, Jan. 1, 1985.
English Derwent Abstract AN 1981-66242D corresponding to DE 3007377.
Patent Abstract of Japan corresponding to JP 07-315980.
Patent Abstract of Japan corresponding to JP 63-017291.

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