Method and device for testing the ESD resistance of a...

Details Method and device for testing the ESD resistance of a... Method and device for testing the ESD resistance of a...

2006-03-07

2006-03-07

Deb, Anjan (Department: 2858)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

For fault location

C324S691000, C324S693000

Reexamination Certificate

active

07009404

ABSTRACT:
To test the ESD resistance of a semiconductor component, for example of a NOS transistor, which can be used as a PSD protective element in a chip, a direct current characteristic of the semiconductor component is monitored and the ESD resistance of the respective semiconductor component is inferred depending on this. In particular, the direct current failure threshold of the semiconductor component at which an increased leakage current occurs in the non-conducting direction of the semiconductor component can be monitored in operation of the semiconductor component using an applied direct current and the ESD resistance of the semiconductor component inferred depending on a change in this direct current failure threshold.

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Ashton, R., “Test Structures and Modified Transmission Line Pulse System for the Study of Electrostatic Discharge”, IEICE Trans. Electron., vol. E79-C, No. 2 (Feb. 1996) pp. 158-164.

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