Method and device for testing semiconductor laser

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S076220, C702S076000, C372S096000

Reexamination Certificate

active

07075324

ABSTRACT:
In testing a distributed feedback semiconductor laser with a grating having a phase shift part, a spectrum of the distributed feedback semiconductor laser is measured. A difference between an intensity of a side mode at a high-frequency-wave side of a main mode and an intensity of a side mode at a low-frequency-wave side of the main mode is calculated. The distributed feedback semiconductor laser is judged non-defective when the difference is more than a certain value.

REFERENCES:
patent: 5077752 (1991-12-01), Tada et al.
patent: 5289114 (1994-02-01), Nakamura et al.
patent: 5960023 (1999-09-01), Takahashi
patent: 6026105 (2000-02-01), Sheridan-Eng
patent: 2003/0072344 (2003-04-01), Lam et al.
patent: 3802841 (1989-08-01), None
patent: 63-55432 (1988-03-01), None
Kawano et al. Semiconductor Laser Checking Method, 06-436, English Translation of Japanese Kokai Patent Application No. Sho 63[1988]-55432.
Huang, Y. et al., “Isolator-Free 2.5-Gb's 80-km Transmission by Directly Modulated λ/8 Phase-Shifted DFB-LDs Under Negative Feedback Effect of Mirror Loss”, IEEE Photonics Technology Letters, vol. 13, No. 3, Mar. 2001, pp. 245-247.
Numai, T, “Fundamentals of Semiconductor laser engineering”, Maruzen Co., Ltd., pp. 167-170.
Huang, Y et al., “Isolator-Free 2.5-Gb's 80-sm Transmission by Directly Modulated λ/8 Phase-Shifted DFB-LDs Under Negative Feedback Effect of Mirror Loss”, IEEE Photonics Technology Letters, vol. 13, No. 3, Mar. 2001, pp. 245-247.

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