Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Patent
1997-11-24
2000-05-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
257373, 257547, H01L 2900, H01L 2976, H01L 2994, H01L 31062
Patent
active
060607580
ABSTRACT:
A suppression method is applied to an integrated circuit formed on a substrate of p-type material having at least one region of n-type material with junction isolation, a first electrical contact on the frontal surface of the substrate, a second electrical contact on the n-type region and a third electrical contact on the back of the substrate connected to a reference (ground) terminal of the integrated circuit. To avoid current in the substrate due to the conduction of parasitic bipolar transistors in certain operating conditions of the integrated circuit, the method provides for monitoring the potential of the second contact to detect if this potential departs from the (ground) potential of the reference terminal by an amount greater than a predetermined threshold value. If this occurs the first contact is taken to the potential of the second contact, otherwise they are held at the (ground) potential of the reference terminal. A device and an integrated circuit which utilize the method are also described.
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Pedrazzini Giorgio
Pozzoni Massimo
Ravanelli Enrico Maria
Ricotti Giulio
Galanthay Theodore E.
Saadat Mahshid
SGS--Thomson Microelectronics S.r.l.
Wilson Allan R.
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