Method and device for semiconductor laser with controlled thickn

Details Method and device for semiconductor laser with controlled thickn Method and device for semiconductor laser with controlled thickn

1993-09-28

1995-07-04

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 3025

Patent

active

054307503

ABSTRACT:
An object is to provide a semiconductor laser device having a continuous distribution in reflection and transmission at the end surface thereof, and a method therefor. In the semiconductor laser device having at the end surface thereof an end surface protection film for preventing oxidation of the end surface and an optical thin film for controlling reflectance, the end surface protection film has continuously-varying film thickness and the optical thin film has constant film thickness. By designing the end surface in a mirror-surface form and varying reflectance, characteristics such as high output, low power consumption, etc. can be improved.

REFERENCES:
patent: 4337443 (1982-06-01), Umeda et al.
patent: 4751710 (1988-06-01), Yamaguchi et al.
patent: 4852112 (1989-07-01), Kagawa et al.
patent: 5056099 (1991-10-01), Bradley
patent: 5144635 (1992-09-01), Suhara
patent: 5173914 (1992-12-01), Kokubo
patent: 5208468 (1993-05-01), Kawanishi et al.

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