Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-10-21
1999-09-14
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438745, 156345, H01L 2100
Patent
active
059522429
ABSTRACT:
A means for removing a semiconductor wafer from a flat substrate uses a device for removing a semiconductor wafer from a polishing cloth of a double side polishing machine. The method has a liquid being pressed through the substrate against the semiconductor wafer lying on the substrate, such that the semiconductor wafer is lifted up from the substrate by the action of the liquid. Then the wafer is picked up by a pick-up device.
REFERENCES:
patent: 5494862 (1996-02-01), Kato et al.
patent: 5527209 (1996-06-01), Volodarsqy et al.
Patent Abstracts of Japan, vol. 011, No. 344 (M-640) & JP 62 124844 A (Hihi Ltd).
Patent Abstracts of Japan, vol. 097, No. 001 & JP08229807A (Fusiuoshi Mach Corp).
Feuchtinger Ernst
Pietsch Georg
Powell William
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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