Method and device for reducing crosstalk in back illuminated...

Details Method and device for reducing crosstalk in back illuminated... Method and device for reducing crosstalk in back illuminated...

2011-07-26

2011-07-26

Mandala, Victor (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C438S070000, C438S072000, C257S292000, C257S437000, C257SE21001, C257SE21566, C257SE31001

Reexamination Certificate

active

07985612

ABSTRACT:
A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially overlying the insulator layer, an interface being formed where the seed layer comes in contact with the insulator layer; forming an epitaxial layer substantially overlying the seed layer, the epitaxial layer defining plurality of pixel regions, each pixel region outlining a collection well for collecting charge carriers; and forming one of an electrical, optical, and electrical and optical barrier about the outlined collection well extending into the epitaxial layer to the interface between the seed layer and the insulator layer. The seed layer and the epitaxial layer of the device have a net dopant concentration profile which has an initial maximum value at the interface of the seed layer and the insulator layer and which decreases monotonically with increasing distance from an interface within an initial portion of the semiconductor substrate and the epitaxial layer.

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PCT/US2008/65708 International Search Report, dated Aug. 22, 2008.

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