Method and device for proximity-effect correction

Details Method and device for proximity-effect correction Method and device for proximity-effect correction

1996-10-24

1997-12-16

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

364491, H01J 37302

Patent

active

056988591

ABSTRACT:
A method of correcting proximity effect of a pattern formed on an object is disclosed where the pattern on the object is formed by exposing a beam pattern which is created based on pattern data expressing the pattern. The method includes the steps of calculating an ideal beam-intensity profile of the beam pattern which creates the pattern on the object in a desired form, the ideal beam-intensity profile having gradual changes of a beam intensity, dividing edges of the pattern into line segments in the pattern data, the line segments being provided with displacement codes which represent at least one of first displacements of the line segments in normal directions thereof and second displacements of the line segments in extending directions of the line segments, and changing the displacement codes to displace the line segments such that a beam-intensity profile obtained from the pattern data becomes closer to the ideal beam-intensity profile.

REFERENCES:
patent: 4586141 (1986-04-01), Yasuda et al.
patent: 5159201 (1992-10-01), Frei

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