Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon
Reexamination Certificate
2011-04-19
2011-04-19
Vanoy, Timothy C (Department: 1736)
Chemistry of inorganic compounds
Silicon or compound thereof
Elemental silicon
C423S349000, C423S350000, C117S002000, C117S089000
Reexamination Certificate
active
07927571
ABSTRACT:
In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body with deposited silicon, until at least the time when the reactor is closed in order to deposit silicon on the second carrier body.
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Patent Abstract corres. to JP 63-225513, published Sep. 1988.
Altmann Thomas
Croessmann Ivo
Sendlinger Hans Peter
Brooks & Kushman P.C.
Liao Diana J
Vanoy Timothy C
Wacker Chemie AG
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