Method and device for producing globular grains of...

Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon

Reexamination Certificate

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Details

C425S007000, C425S174200, C239S086000, C239S102200

Reexamination Certificate

active

06951637

ABSTRACT:
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 μm can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.

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