Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Patent
1997-06-13
2000-07-18
Ton, My-Trang Nu
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
327433, H03K 1760, H03K 17687
Patent
active
060912782
ABSTRACT:
In a digital BiCMOS process the storage capability of MOS transistors and the large transconductance of bipolar transistors can be utilized in such a way, that the speed is primarily determined by the capacitance seen by the MOS transistor (4) and the transconductance of the bipolar transistor (5). The advantages over the prior SI technique in CMOS are higher speed, smaller errors and higher accuracy. The advantages over other techniques in BiCMOS are smaller errors and higher accuracy. The unique feature of the invented technique is the combination of high input impedance of the MOS devices and high transconductance of the bipolar devices, where both devices are only available in BiCMOS process and not in the CMOS process.
REFERENCES:
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patent: 5382842 (1995-01-01), Oguri
International Search Report.
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B. Leung, "BiCMOS Current Cell and Switch for Digital-to-Analog Converters", IEEE Journal of Solid-State Circuits, vol. 28, No. 1, Jan. 1993, pp. 68-71.
Walter Guggenbuhl et al., "Switched-Current Memory Circuits for High-Precision Applications", IEEE Journal of Solid-State Circuits, vol. 29, No. 9, Sep. 1994, pp. 1108-1116.
Richard J. Romanczyk et al., "BiCMOS Circuits for High Speed Current Mode D/A Converters", IEEE Journal of Solid-State Circuits, vol. 30, No. 8, Aug. 1995, pp. 923-934.
Peter Shah et al., "A New BiCMOS Technique for Very Fast Discrete-Time Signal Processing", Proceedings of the 1995 International Symposium on Circuits and Systems, 1995, pp. 323-326.
C. Toumazou, et al., "Switched-Currents an Analogue Technique for Digital Technology", Peter Peregrinious Ltd, 1993, pp. 36-39 and 232-235.
Nu Ton My-Trang
Telefonaktiebolaget LM Ericsson
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