Method and device for preserving word line pass bias using...

Details Method and device for preserving word line pass bias using... Method and device for preserving word line pass bias using...

2006-06-13

2006-06-13

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S203000, C365S185330, C365S194000

Reexamination Certificate

active

07061803

ABSTRACT:
The present invention discloses a method and device for preserving a word line pass bias using a ROM block in a NAND-type flash memory. The method for preserving the word line pass bias includes a step for closing a precharge transistor of a precharge circuit before the operation of a pass transistor for precharging a selected word line, by separately outputting from the ROM block a program precharge control signal transmitted to a group access signal generation circuit for outputting a group access signal and a program precharge control signal transmitted to a block word line, and synchronizing the signals in a synchronization circuit. Accordingly, time mismatching in the program and read operations of the NAND-type flash memory is prevented, and a predetermined voltage precharged to the selected block word line is precisely inputted to a specific cell and preserved.

REFERENCES:
patent: 6058044 (2000-05-01), Sugiura et al.

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