Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-04-11
2006-04-11
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S747000, C438S750000, C438S753000, C216S084000, C216S085000, C216S093000, C216S094000, C216S096000, C205S640000, C205S645000, C205S655000, C205S674000
Reexamination Certificate
active
07026255
ABSTRACT:
In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created by UV light irradiation at the contact area is measured. To increase the etching quality, a jet of fresh electrolyte liquid is repeatedly applied to the contact area. A device for carrying out the method includes a container to be filled with an electrolyte liquid, a UV source for illuminating the semiconductor sample with UV light through the electrolyte liquid, and a measuring instrument for measuring the photo-current created during UV light irradiation of the contact area. Further provided are an inlet for supplying fresh electrolyte liquid, directed towards the semiconductor sample, and a device attached to the inlet for repeated production of electrolyte fluid jets, directed towards the semiconductor sample.
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Chen Eric B.
Feiereisen Henry M.
Norton Nadine G.
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