Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface
Reexamination Certificate
2006-04-25
2006-04-25
Harvey, MinSun Oh (Department: 2828)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Passivating of surface
C372S049010
Reexamination Certificate
active
07033852
ABSTRACT:
A method and device for passivating the resonator end faces, in particular the cleaved edges of semiconductor laser diodes, by high-temperature epitaxy of the quaternary compound semiconductor InxGa1-xAsyP1-y, where (0≦x≦1 and 0≦y≦1). To passivate the InxGa1-xAsyP1-y, an additional passivation layer may be applied in situ. The semiconductor crystal is brought to the temperature required for the epitaxy by being heated. To avoid thermal destruction of the contact metal during the epitaxy, the metal is only deposited after the cleaving operation and the passivation. The deposition of the metal on the passivated laser bar is carried out by means of special equipment that allows deposition of metal on the entire surface of the laser and at the same time prevents vapour deposition on the cleaved edges. The method and device can be applied to the production of high-power laser diodes.
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Häusler Karl
Kirstaedter Nils
Harvey MinSun Oh
Lumics GmbH
Menefee James
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