Method and device for optically monitoring fabrication...

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C382S156000, C382S159000, C382S224000, C250S559010, C356S237500

Reexamination Certificate

active

07003149

ABSTRACT:
A method for monitoring fabrication processes of finely structured surfaces in a semiconductor fabrication includes the steps of providing reference signatures of finely structured surfaces, measuring at least one signature of a test specimen surface, comparing the measured signature with the reference signatures, and classifying the test specimen surface by using the comparison results, wherein the measurement of the reference signatures is carried out by measuring the local distribution and/or intensity distribution of diffraction images on production prototypes having a specified quality. The classification is preferably carried out here with a neural network having a learning capability and/or a fuzzy logic. Furthermore, a device for carrying out the method is provided.

REFERENCES:
patent: 4964726 (1990-10-01), Kleinknecht et al.
patent: 5703692 (1997-12-01), McNeil et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5830611 (1998-11-01), Bishop et al.
patent: 5982921 (1999-11-01), Alumot et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6137570 (2000-10-01), Chuang et al.
patent: 6191459 (2001-02-01), Hofmann et al.
patent: 198 24 624 (1999-02-01), None
patent: 0 874 396 (1998-10-01), None
patent: 60 224 041 (1985-11-01), None
patent: 61 169 750 (1986-07-01), None
patent: 62 200 251 (1987-09-01), None
patent: 9 191 032 (1997-07-01), None
patent: 9 318 330 (1997-12-01), None
M. G. Moharam et al.: “Three-dimensional vector coupled-wave analysis of planar-grating diffraction”,J. Opt. Soc. Am., vol. 73, No. 9, Sep. 1983, pp. 1105-1112.
M. G. Moharam et al.: “Rigorous coupled-wave analysis of metallic surface-relief gratings”,J. Opt. Soc. Am. A, vol. 3, No. 11, Nov. 1986, pp. 1780-1787.
S. S. H. Naqvi et al.: “Etch depth estimation of large-period silicon gratings with multivariate calibration of rigorously simulated diffraction profiles”,J. Opt. Soc. Am. A, vol. 11, No. 9, Sep. 1994, pp. 2485-2493.
Christopher J. Raymond et al.: “Multiparameter grating metrology using optical scatterometry”,J. Vac. Sci. Technol. B, vol. 15, No. 2, Mar./Apr. 1997, pp. 361-368.
Jörg Bischoff et al.: “New aspects of optical scatterometry applied to microtechnology”,SPIE, vol. 3215, 1997, pp. 144-155.
Scott Bushman et al.: “Scatterometry Measurements for Process Monitoring of Polysilicon Gate Etch”, SPIE, vol. 32131997, pp. 79-90, XP-000890146.
Stephen A. Coulombe et al.: “Ellipsometric-Scatterometry for sub-0.1 μm CD measurements”, SPIE, vol. 3332, 1998, pp. 282-293, XP-000890148.
Jörg Bischoff et al.: “Optical scatterometry of qaurter micron patterns using neural regression”, SPIE, 1998, vol. 3332, pp. 526-537, XP-000890149.
N. Benesch et al.: Application and cost analysis of scatterometry for integrated metrology, SPIE, vol. 3743, May 1, 1999, pp. 25-32, XP-000890150.
Michael R. Murnane et al.: “Developed photresist metrology using scatterometry”, SPIE, vol. 2196, Mar. 1994, pp. 47-59, XP-000890152.
Ilkka Kallioniemi et al.: “Optical scatterometry of subwavelength diffraction gratings: neural-network approach”, Applied Optics, vol. 37, No. 25, Sep. 1, 1998, pp. 5830-5835, XP-000890173.
Junko Tanaka et al.: “A Sub-0.1-μm Grooved Gate MOSFET with High Immunity to Short-Channel Effects”, IEDM 93, pp. 537-540.
Ken-ichiro Nakagawa et al.: “A Flash EEPROM Cell with Self-Aligned Trench Transistor & Isolation Structure”, 2000 Symposium on VLSI Technology Digest of Technical Papers.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and device for optically monitoring fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and device for optically monitoring fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and device for optically monitoring fabrication... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3676297

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.