Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2005-02-15
2005-02-15
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S513000
Reexamination Certificate
active
06855619
ABSTRACT:
The invention concerns a method for making substrates, in particular for optics, electronics or optoelectronics. The method includes an operation which consists in implanting (100) atomic species beneath the surface of a material in the form of a cylindrical ingot (1), at a depth of implantation distributed about a certain value by bombardment of the atomic species on a zone of the ingot (1) cylindrical surface, and an operation which consists in removing (300), at a separation depth located proximate to the depth of implantation, the layer (2) of material located between the surface and the separation depth, to remove the layer (2) from the rest of the cylindrical ingot (1).
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Ghyselen Bruno
Iwasaki Atsushi
Nhu David
S.O.I. Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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