Method and device for forming semiconductor thin film, and metho

Details Method and device for forming semiconductor thin film, and metho Method and device for forming semiconductor thin film, and metho

1997-09-10

2000-12-12

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438485, H01L 3118

Patent

active

061597635

ABSTRACT:
There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type. Thereby, a photovoltaic element having a high quality and superior uniformity over a large area, less defects, superior photo deterioration property and improved series resistance can be manufactured providing a high throughput in large quantities with good reproducibility.

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patent: 5700326 (1997-12-01), Takatsu et al.
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