Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Patent
1996-06-05
1998-09-15
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
427551, 427553, 427557, 427562, 427563, 427574, 427578, 427579, 4272551, 4272552, 4272555, 4272557, 427585, 118719, 118723ER, 118729, C23C 1622
Patent
active
058076140
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates to the field of surface treatment of nonmetallic substrates, in particular polymer, textile (fibers or pieces of wool, cotton, etc.), paper or glass substrates or alternatively wood, plaster or tile substrates, whether these substrates are flat or whether they are in the form of a volume. These surface treatments are usually performed for the purpose of improving the adhesion and wettability behavior of these substrates.
2. Description of the Related Art
Surface treatment of the non-metallic substrates have formed the subject of a large number of studies, especially enabling the following categories of methods to be listed:
However, these methods are not completely satisfactory and have a certain number of non-negligible drawbacks.
Thus, as regards flame brushing, the method proves to be difficult to control, in particular difficult to apply to nonplanar surfaces.
The drawbacks of the liquid-phase methods are associated with environmental problems, especially because of the reprocessing of the solutions before disposal, but they are also associated with problems of drying after treatment.
As regards plasma treatments, whether these treatments are used to activate the surface of the substrate or to deposit silica on this surface, they are usually performed under vacuum or under low pressure, which is complex and the excessive cost of which cannot be ignored and is relatively incompatible with the low added value of these products, especially polymers.
In this context, the Applicant has recently proposed, in document FR-A-2,670,506, a process for the deposition of a thin layer of silicon oxide on a polyolefin substrate. This process made it possible, successively or concomitantly, to preactivate the polymer surface by corona discharge and then to deposit a layer of silicon oxide by exposing the surface thus preactivated to a silane-containing atmosphere, this process being carried out at atmospheric pressure.
Although this process indubitably constitutes an advance compared to the existing techniques, the Applicant has demonstrated the fact that it may be improved, especially in that: critical for obtaining perfectly homogeneous treatment, constituting a constraint when it is necessary to treat substrates of variable thickness or of thickness which varies from one substrate to another; substrates pass within the discharge, resulting in a source of contamination for the electrodes because of the presence of dust or fatty particles on the surface of these substrates; the gaseous silicon precursor (silane) is introduced directly into the discharge, leading to the risk of depositing silicon oxides on the electrodes; implemented limited the power density which could be employed, increasing the power density above this limit running the risk of causing delocalization of the ionized cloud; exposed to a plasma which, as its name indicates, includes electrically charged species, this situation not being without problems in the case of insulating materials, as polymers are, in which a charge build-up occurs.
In a more general context, the Applicant in document FR-A-2,692,730, the content of which is assumed to be incorporated here for reference, has recently proposed a device for forming excited or unstable molecules which operate substantially at atmospheric pressure and enable enhanced energy densities to be achieved.
SUMMARY OF THE INVENTION
In this context, the subject of the present invention is to propose an improved process for forming a deposition of a silicon-containing film on a nonmetallic substrate, making it possible: treated and the device used to carry out this treatment; treatment to be achieved; species; situation giving rise to reactions inside the device in question (powder deposition); and having to pass into this device.
In order to achieve this, according to the invention, in order to form a deposition of a silicon-containing film on a nonmetallic substrate, a downstream apparatus for forming excited or unstable gaseo
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patent: 4774062 (1988-09-01), Heinemann
patent: 4951602 (1990-08-01), Hanai
patent: 5114529 (1992-05-01), Masuyama et al.
patent: 5124173 (1992-06-01), Uchiyama et al.
patent: 5458856 (1995-10-01), Marie et al.
Coeuret Fran.cedilla.ois
Rabia Stephane
Sindzingre Thierry
Beck Shrive
L'Air Liquide Societe Anonyme pour l'Etude et, l'Exploitation de
Meeks Timothy
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