Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-02-13
2007-02-13
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S531000, C257S532000, C257S499000, C257SE27009
Reexamination Certificate
active
10486453
ABSTRACT:
The electronic device (10) comprises a capacitor (12) and an inductor (11) and is present on a substrate (1) with an unplanarized surface (2). This is realized in winding (21) of the inductor (11) has a thickness of at least 1 micron and has a planarized upper surface (81). The upper electrode (32) of the capacitor is present in a second electrode layer (6) and has a lower surface (82) which is spaced from the substrate (1) by a larger distance than the upper surface (81) of the lower electrode (31). The second electrode layer (6) preferably includes a second winding (22) of the inductor (11). The electronic device (10) is suitable for use at high frequencies.
REFERENCES:
patent: 5969405 (1999-10-01), Aeugle
patent: 5969422 (1999-10-01), Ting et al.
patent: 5998838 (1999-12-01), Tanabe et al.
patent: WO9716836 (1997-05-01), None
patent: 03017479 (2003-02-01), None
Matters-Kammerer Marion Kornelia
Rijks Theodoor Gertrudis Silvester Maria
Van Beek Jozef Thomas Martinus
Van Esch Henricus Andreas
Flynn Nathan J.
NXP B.V.
Quinto Kevin
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