Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-06-25
2010-11-23
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C977S701000, C977S840000, C977S849000, C977S859000, C977S901000, C438S674000
Reexamination Certificate
active
07838851
ABSTRACT:
The present invention provides a method and an apparatus for producing a two-dimensional patterned beam, e.g. a two-dimensional patterned and focused ion beam, for fabricating a nano-structure on a substrate with the precursor gas. In comparison with the conventional focused ion beam that is applied for fabricating a dot-like nano-structure the method is more simplified and easy to be achieved.
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Chao Liang-Chiun
Chen Jyh-Shin
Chen Sheng-Yuan
Chou Hsiao-Yu
Berman Jack I
Instrument Technology Research Center, National Applied Research
Ippolito Rausch Nicole
Volpe and Koenig P.C.
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