Method and device for electrostatic discharge protection

Details Method and device for electrostatic discharge protection Method and device for electrostatic discharge protection

2006-11-16

2009-11-17

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C438S199000, C257S355000

Reexamination Certificate

active

07619262

ABSTRACT:
Electrostatic discharge (ESD) protection is provided for an integrated circuit. In an aspect, a dynamic region having doped regions is formed on an epitaxy layer and substrate, and interconnects contact the dynamic region. In an aspect, the dynamic region operates as a back-to-back SCR that snaps back in both positive and negative voltage directions. In an aspect the dynamic region operates as an SCR that snaps back in a positive voltage direction and operates as a simple diode in a negative voltage direction. In another aspect, the dynamic region operates as an SCR that snaps back in a negative voltage direction and operates as a simple diode in a positive voltage direction. ESD protection over an adjustable and wide positive and negative voltage range is provided by varying widths and positioning of various doping regions. Breakdown voltages, critical voltages and critical currents are independently controlled.

REFERENCES:
patent: 7176529 (2007-02-01), Ohguro
patent: 2005/0275065 (2005-12-01), Cogan et al.
patent: 2008/0278874 (2008-11-01), Schwantes et al.

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