Method and device for electrostatic discharge protection

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...

Reexamination Certificate

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C257SE29264

Reexamination Certificate

active

07981753

ABSTRACT:
A device for providing electrostatic discharge (ESD) protection is provided. The device includes a semiconductor substrate having a drain, a source, and a gate formed therein. The drain contains a region having a resistance that is higher than the resistance of the remainder of the drain and the source. The gate region is in contact with this higher resistance region and the source. In one embodiment, the higher resistance is lacking silicide in order to provide the higher resistance. A method of forming a device for providing ESD protection is included.

REFERENCES:
patent: 6476449 (2002-11-01), Lin
patent: 7302378 (2007-11-01), Hayashi
patent: 2003/0081363 (2003-05-01), Kawashima et al.

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