Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2011-07-19
2011-07-19
Ha, Nathan W (Department: 2814)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C257SE29264
Reexamination Certificate
active
07981753
ABSTRACT:
A device for providing electrostatic discharge (ESD) protection is provided. The device includes a semiconductor substrate having a drain, a source, and a gate formed therein. The drain contains a region having a resistance that is higher than the resistance of the remainder of the drain and the source. The gate region is in contact with this higher resistance region and the source. In one embodiment, the higher resistance is lacking silicide in order to provide the higher resistance. A method of forming a device for providing ESD protection is included.
REFERENCES:
patent: 6476449 (2002-11-01), Lin
patent: 7302378 (2007-11-01), Hayashi
patent: 2003/0081363 (2003-05-01), Kawashima et al.
Huang Cheng-Hsiung
Liu Yow-Juang (Bill)
O Hugh Sungki
Shih Chih-Ching
Altera Corporation
Ha Nathan W
Martine & Penilla & Gencarella LLP
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