Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1996-03-21
1998-09-08
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257566, 327 53, 327 54, 327 56, 327 77, H01L 27082, H01L 27102, H01L 2970
Patent
active
058048669
ABSTRACT:
A method and device for maintaining junction isolation between a second region that is normally clamped at a reference potential, contained within a first region of an opposite type of conductivity whose potential is subject to large inertial swings. The junction is ensured even when the potential of the first region moves toward and beyond the reference potential to which the second region is clamped, by connecting the second region to the reference potential by a switch, and causing the switch to open which places the second region in a floating state, leaving it free to track the potential excursion of the first region. The switch is closed after the potential of the first region has returned to a normal value. A comparator senses a shift of the potential of the second region from the reference potential to which it is clamped. The shift is dynamically induced by the capacitive coupling of the two regions, and triggers off the clamping switch.
REFERENCES:
patent: 5065055 (1991-11-01), Reed
patent: 5159207 (1992-10-01), Pavlin et al.
Patents Abstracts of Japan, vol. 013, No. 522 (E-849), Nov. 21, 1989 & JP-A-01 212463 (Mitsubishi Electric Corp.).
Aiello Natale
Graziano Vito
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Ngo Ngan V.
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