Method and device for dissolving surface layer of semiconductor

Details Method and device for dissolving surface layer of semiconductor Method and device for dissolving surface layer of semiconductor

1996-11-27

1999-04-06

Utech, Benjamin

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 90, 216 92, 216 99, 216 57, B08B 600, H01L 21302

Patent

active

058905014

ABSTRACT:
Disclosed is a method of dissolving a surface of a semiconductor substrate or a thin-film surface layer formed on the semiconductor substrate, with an oxidizing agent and fluorine-series gas. The method is characterized in that an initial dissolution rate is controlled by gradually increasing a concentration of fluorine-series gas introduced in a dissolving solution containing the oxidizing agent.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5167761 (1992-12-01), Westendors et al.
"Mechanisms of the HF/H.sub.2 O Vapor Phase Etching of SiO.sub.2 ";J. Voc. Sci. Tech. A ; 10(4); 8-1992; pp. 806-811; Helms et:al.

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