Method and device for determining the physical characteristics o

Details Method and device for determining the physical characteristics o Method and device for determining the physical characteristics o

1983-09-08

1984-12-11

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

204297M, 204 40D, 324 715, G01N 2746

Patent

active

044876610

ABSTRACT:
In a method for determining the physical characteristics of a silicon wafer, one side of the wafer (4) is removably fixed to the base (2) of a container (1) so as to close off a hole (3) therein. An electrical connection to this side of the wafer (4) is made thru the hole (3). The wafer (4) forms the working electrolyte of a cell comprising an electrolyte contained in the container (1). An auxiliary electrode (14) is removably placed in the electrolyte. The method and the device implementing it can be used to determine the crystallographic and electrical characteristics of a sample of silicon.

REFERENCES:
patent: 3379625 (1968-04-01), Csabi
patent: 3530045 (1970-09-01), Alburger
patent: 3660250 (1972-05-01), Duffy et al.
patent: 4125440 (1978-11-01), Markovits
patent: 4180439 (1979-12-01), Deines et al.
Cohen et al., "Monitor for Dev. of Fine Patterns in Resist Layers", IBM Tech. Dis. Bulletin, vol. 21, No. 9, Feb. 1979, pp. 3859-3861.
Charpentier et al., "Electrochem. Cell for Meas. of Physical Prop. of Semiconductors", IBM Tech. Dis. Bulletin, vol. 26, No. 4, 9/83, pp. 2020-2022.
Bogardus et al., "Silicon Dioxide Defect Detector", IBM Tech. Dis. Bulletin, vol. 20, No. 1, 6/77, pp. 432-433.

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