Optics: measuring and testing – Crystal or gem examination
Patent
1994-02-02
1995-11-28
Rosenberger, Richard A.
Optics: measuring and testing
Crystal or gem examination
356432, G01N 2100
Patent
active
054712939
ABSTRACT:
A method and device is provided for determining defects within a single crystal substrate. The methodology includes a surface photovoltage (SPV) technique in which the magnitude of non-linearity is quantified and correlated to defects within the crystal lattice. The correlation factor is determined in a rapid and efficient manner using least square correlation methodology without having to determine diffusion length and incur difficulties associated therewith. Obtaining a quantifiable least square correlation factor allows the operator to quickly determine the amount of crystalline damage often encountered by, for example, ion implantation. In addition, the operator can determine the relative depth and position of defective crystalline layers within the substrate based upon demarcations between monotonically and non-monotonically aligned points plotted in a graph of reciprocal photovoltage versus reciprocal absorption coefficient.
REFERENCES:
patent: 4567431 (1986-01-01), Goodman
patent: 5025145 (1991-06-01), Lagowski
Lagowski, et al., "Non-Contact Mapping of Heavy Metal Contamination for Silicon IC Fabrication", (1992), pp. A185-A192.
Moore, "Theory and Experiment on the Surface-Photovoltage Diffusion-Length Measurement as Applied to Amorphous Silicon", American Institute of Physics, (1983), pp. 222-228.
Anjum Mohammed
Armour Norman L.
Kyaw Maung H.
Lowell John K.
Wenner Valerie A.
Advanced Micro Devices
Daffer Kevin L.
Rosenberger Richard A.
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