Patent
1982-05-27
1986-05-06
Edlow, Martin H.
357 231, 357 2314, 357 2315, H01L 2966
Patent
active
045875430
ABSTRACT:
A device for detecting metal ions in an atmosphere. The device is based on a well known insulated gate-type field-effect transistor (MOSFET). The device includes a metal ion detecting element based on the MOSFET; a means, connected to the metal ion detecting element, for making a current flow through said metal ion detecting element; and a means, connected to the metal ion detecting element, for detecting the change of the strength of the current flowing through the metal ion detecting element, the change being brought by the electric charge of the metal ions which reached the gate oxide film. A metal ion introducing passage for allowing migration of the metal ions to be detected to the gate oxide film is formed in the gate electrode of the metal ion detecting element in the direction of its thickness.
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Copy and English Translation of the Official Action.
Sodium-Nak Engineering Handbook, vol. III, Chap. 4, Sec. 6, "Leak Detection", O. J. Foust et al.; 1978.
Journal of Applied Physics, vol. 36, No. 5, "Ion Transport Phenomena in Insulating Films", E. H. Snow et al.; May 1965.
Ohshima Iwao
Ohtani Ryoichi
Edlow Martin H.
Jackson Jerome
Tokyo Shibaura Denki Kabushiki Kaisha
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