Method and device for correcting proximity effects

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

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C700S057000, C700S160000, C250S492200, C250S492220, C250S492300, C355S053000, C355S055000, C355S077000, C430S005000, C430S296000, C430S942000, C716S030000, C716S030000, C706S012000, C706S016000, C706S021000, C706S023000, C706S024000, C706S025000

Reexamination Certificate

active

06920368

ABSTRACT:
The present invention relates to a method for determining the precompensated pattern of exposure doses of an electron beam required per pattern position to obtain a desired pattern in a coating on a substrate, comprising the steps of: determining a smearing function of the electron beam; determining a precompensated pattern with the smearing function and the desired pattern, wherein the determination is performed such that exposure doses contain almost exclusively positive values and the exposure doses are smooth relative to each other.

REFERENCES:
patent: 5736281 (1998-04-01), Watson
patent: 6035113 (2000-03-01), Gerber et al.
patent: 0812000 (1997-12-01), None
Jedrasik, P. et al. “Optimal filtering versus regularization methods in the Fourier precompensation based proximity neurocorrection in electron beam lithography,”Microelectronic Eng.41-42: 195-198 (1998).
Jedrasik P. “Neural networks application for fast, direct correction kernel generation for proximity effects correction in electron beam lithography,”Microelectronic Eng.27(1-4): 191-194 (1995).
Frye, R.C. “Adaptive neural network algorithms for computing proximity effect corrections,”J Vacuum Sci&Tech(Part B) 9(6): 3054-3058 (1991).

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